Hafnium Silicide Ep1408541b1

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Hafnium Silicide Target for Forming Gate Oxide Film, …

A hafnium silicide target is provided. The target is used for forming a gate oxide film composed of HfSi 1.02-2.00 . The target material is superior in workability ...

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Hafnium Silicide Ep1408541b1 - familyhospitals.in

Hafnium is estimated to make up about 5.8 ppm of the Earth's upper crust by weight. It does not exist as a free element in nature, but is found combined in solid ...

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Hafnium silicide - supplier and manufacturer Hafnium silicide, Get supplier listing of Hafnium silicide and equal product

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Patent US20090194898 - Hafnium Silicide Target for …

A hafnium silicide target is provided. The target is used for forming a gate oxide film composed of HfSi1.02-2.00. The target material is superior in workability and ...

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EP1408541A1 - Hafnium silicide target for forming gate ...

The present invention relates to a hafnium silicide target for forming a gate oxide film composed of HfSi 1.02-2.00 . Obtained is a hafnium silicide target superior ...

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Hafnium Silicide Ep1408541b1 - indiangallery.co.in

EP1408541B1 - Hafnium silicide target for forming gate ... Prior art keywords powder silicide target film hafnium Prior art date 2001-07-18 Legal status (The legal ...

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EP1408541B1 - Hafnium silicide target for forming gate ...

Prior art keywords powder silicide target film hafnium Prior art date 2001-07-18 Legal status (The legal status is an assumption and is not a legal conclusion.

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Patent EP1408541B1 - Hafnium silicide target for …

02733313, 02733313.7, 2002733313, ep 1408541 b1, ep 1408541b1, ep-b1-1408541, ep02733313, ep1408541 b1, ep1408541b1, ep20020733313, pct/2002/5547, ...

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Patent US20040170552 - Hafnium silicide target for …

The present invention relates to a hafnium silicide target for forming a gate oxide film composed of HfSi1.02-2.00. Obtained is a hafnium silicide target superior in ...

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Hafnium Silicide Ep1408541b1; pricelist of stone crusher machines sand making stone quarry; megaprima persada crusher; micron accuracy centerless grinding; Eau Claire ...

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Patent EP1408541A4 - Hafnium silicide target for …

A hafnium silicide target for forming a gate oxide film which comprises HfSi1.02−2.00; and a method for preparing the hafnium silicide target. The hafnium ...

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Patent US20040170552 - Hafnium silicide target for forming ...

The present invention relates to a hafnium silicide target for forming a gate oxide film composed of HfSi1.02-2.00. Obtained is a hafnium silicide target superior in ...

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Hafnium Oxide Fabriing - indiangallery.co.in

Sub-micron grating fabrication on hafnium oxide thin-film waveguides with focused ion-beam milling Kalyani Chaganti, Ildar Salakhutdinov, Ivan Avrutsky, ...

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Patent US7674446 - Hafnium silicide target for forming ...

A hafnium silicide target is provided. The target is used for forming a gate oxide film composed of HfSi1.02-2.00. The target material is superior in workability and ...

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HAFNIUM SILICIDE TARGET FOR FORMING GATE …

Nov 28, 2012· hafnium silicide target for forming gate oxide film and method for preparation thereof

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